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TPN1110ENH,L1Q

TPN1110ENH,L1Q

MOSFET N-CH 200V 7.2A 8TSON

MAX606ESA+

MAX606ESA+

IC REG FLASH MEM 1OUT 8SOIC

SP208EHET-L

SP208EHET-L

IC TRANSCEIVER FULL 4/4 24SOIC

SLO52507.01

SLO52507.01

SLO52507.01

TPN1110ENH,L1Q

TPN1110ENH,L1Q

Image is for reference, please contact us to get the real picture

Part No :

TPN1110ENH,L1Q

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 200V 7.2A 8TSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14190 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 18 - May 22 2024
PDF
TPN1110ENH,L1Q PDF
Type Description
Series:U-MOSVIII-H
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:114mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id:4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:600 pF @ 100 V
FET Feature:-
Power Dissipation (Max):700mW (Ta), 39W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-TSON Advance (3.3x3.3)
Package / Case:8-PowerVDFN
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