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TPW1R306PL,L1Q

TPW1R306PL,L1Q

MOSFET N-CH 60V 260A 8DSOP

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TPW1R306PL,L1Q

TPW1R306PL,L1Q

Image is for reference, please contact us to get the real picture

Part No :

TPW1R306PL,L1Q

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 60V 260A 8DSOP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11663 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 18 - May 22 2024
PDF
TPW1R306PL,L1Q PDF
Type Description
Series:U-MOSIX-H
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:260A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.29mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:91 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8100 pF @ 30 V
FET Feature:-
Power Dissipation (Max):960mW (Ta), 170W (Tc)
Operating Temperature:175°C
Mounting Type:Surface Mount
Supplier Device Package:8-DSOP Advance
Package / Case:8-PowerVDFN
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