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TP65H035G4WS

TP65H035G4WS

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Part No :

TP65H035G4WS

Manufacturer
Transphorm
Description
GANFET N-CH 650V 46.5A TO247-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10503 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 20 - May 24 2024
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:46.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:41mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:4.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 0 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 400 V
FET Feature:-
Power Dissipation (Max):156W (Tc)
Operating Temperature:-55°C ~ 150°C
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
TP65H035G4WS is available at GangBo-ic.com, Please review product page below for detailed information, including TP65H035G4WS price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for TP65H035G4WS to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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