







WIRE MARKER, 0.5 IN H
MEMS OSC XO 65.0000MHZ H/LV-CMOS
DIODE GEN PURP 1KV 40A DO203AB
GB DASPA1.13-DUEQ-25-1-100-R18-LM
LED DURIS P 5
| Type | Description |
|---|---|
| Series: | - |
| Package: | Bulk |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 1000 V |
| Current - Average Rectified (Io): | 40A |
| Voltage - Forward (Vf) (Max) @ If: | 1.95 V @ 40 A |
| Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | 500 ns |
| Current - Reverse Leakage @ Vr: | 100 µA @ 1000 V |
| Capacitance @ Vr, F: | - |
| Mounting Type: | Chassis, Stud Mount |
| Package / Case: | DO-203AB, DO-5, Stud |
| Supplier Device Package: | DO-203AB |
| Operating Temperature - Junction: | -40°C ~ 125°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
|
SR5100L-D1-0000 |
DIODE SCHOTTKY 100V 5A DO201AD |
|
|
BAT54WS-G3-08Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 200MA SOD323 |
|
|
VS-HFA15PB60-N3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 15A TO247AC |
|
|
VS-20ETS08STRR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 20A TO263AB |
|
|
SSA36Sanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 3A 60V SMA |
|
|
1N4247GP-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
|
|
ACURB201-HFComchip Technology |
AUTOMOTIVE DIODE GEN PURP 50V 2A |
|
|
UJ3D1205TSUnitedSiC |
1200V 5A SIC SCHOTTKY DIODE G3, |
|
|
1N4448W-7-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 75V 250MA SOD123 |
|
|
VS-2EFH02HM3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 2A DO219AB |
|
|
MBRD360T4GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 60V 3A DPAK |
|
|
VS-18TQ045STRRHM3Vishay General Semiconductor – Diodes Division |
SCHOTTKY - D2PAK |
|
|
ES1BHM3_A/HVishay General Semiconductor – Diodes Division |
1A 100V SM ULTRAFAST RECT SMA |