







MEMS OSC XO 62.5000MHZ CMOS SMD
XTAL OSC VCXO 70.6560MHZ LVPECL
DIODE SCHOTTKY 100V 16A ITO220AC
SFERNICE POTENTIOMETERS & TRIMME
| Type | Description |
|---|---|
| Series: | - |
| Package: | Tube |
| Part Status: | Active |
| Diode Type: | Schottky |
| Voltage - DC Reverse (Vr) (Max): | 100 V |
| Current - Average Rectified (Io): | 16A |
| Voltage - Forward (Vf) (Max) @ If: | 920 mV @ 16 A |
| Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | - |
| Current - Reverse Leakage @ Vr: | 100 µA @ 100 V |
| Capacitance @ Vr, F: | - |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-2 Full Pack |
| Supplier Device Package: | ITO-220AC |
| Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
|
SD200N12PVVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 200A DO205 |
|
|
NS8KT-7000HE3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP TO220AC |
|
|
SRAS2050HMNGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 50V 20A TO263AB |
|
|
S4PBHM3/86AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 4A TO277A |
|
|
CDBA140SLR-HFComchip Technology |
DIODE SCHOTTKY 40V 1A DO214AC |
|
|
VS-20ETF06SPBFVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 20A D2PAK |
|
|
SRAS830 MNGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 8A TO263AB |
|
|
CURM106-GComchip Technology |
DIODE GEN PURP 800V 1A MINISMA |
|
|
1N5398GHB0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 1.5A DO204AC |
|
|
S1BL MQGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A SUB SMA |
|
|
MBR1045HE3/45Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 10A TO220AC |
|
|
BAS19_S00ZSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 120V 200MA SOT23 |
|
|
UH3D-E3/9ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 3A DO214AB |