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MJD112T4G

MJD112T4G

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MJD112T4G

MJD112T4G

Image is for reference, please contact us to get the real picture

Part No :

MJD112T4G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
TRANS NPN DARL 100V 2A DPAK
Catalog
Transistors - Bipolar (BJT) - Single
Availability
224122 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jul 19 - Jul 23 2025
PDF
MJD112T4G PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:3V @ 40mA, 4A
Current - Collector Cutoff (Max):20µA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 2A, 3V
Power - Max:20 W
Frequency - Transition:25MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
MJD112T4G is available at GangBo-ic.com, Please review product page below for detailed information, including MJD112T4G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for MJD112T4G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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