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MJD44H11-1G

MJD44H11-1G

POWER BIPOLAR TRANSISTOR, 8A, 80

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MJD44H11-1G

MJD44H11-1G

Image is for reference, please contact us to get the real picture

Part No :

MJD44H11-1G

Manufacturer
Rochester Electronics
Description
POWER BIPOLAR TRANSISTOR, 8A, 80
Catalog
Transistors - Bipolar (BJT) - Single
Availability
83385 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 16 - Oct 20 2025
PDF
MJD44H11-1G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:NPN
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:1V @ 400mA, 8A
Current - Collector Cutoff (Max):1µA
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 4A, 1V
Power - Max:1.75 W
Frequency - Transition:85MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:I-PAK
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