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SIA907EDJT-T1-GE3

SIA907EDJT-T1-GE3

MOSFET 2P-CH 20V 4.5A SC-70-6L

SIA907EDJT-T1-GE3

SIA907EDJT-T1-GE3

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Part No :

SIA907EDJT-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET 2P-CH 20V 4.5A SC-70-6L
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
13440 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 10 - Jun 14 2024
PDF
SIA907EDJT-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Not For New Designs
FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:4.5A (Tc)
Rds On (Max) @ Id, Vgs:57mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id:1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:-
Power - Max:7.8W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:PowerPAK® SC-70-6 Dual
Supplier Device Package:PowerPAK® SC-70-6 Dual
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