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IPP60R280E6XKSA1

IPP60R280E6XKSA1

MOSFET N-CH 600V 13.8A TO220-3

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IPP60R280E6XKSA1

IPP60R280E6XKSA1

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Part No :

IPP60R280E6XKSA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 600V 13.8A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10500 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 23 - May 27 2024
PDF
IPP60R280E6XKSA1 PDF
Type Description
Series:CoolMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 430µA
Gate Charge (Qg) (Max) @ Vgs:43 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:950 pF @ 100 V
FET Feature:-
Power Dissipation (Max):104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
IPP60R280E6XKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPP60R280E6XKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPP60R280E6XKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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