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SSR1N60BTM-WS

SSR1N60BTM-WS

MOSFET N-CH 600V 900MA DPAK

SSR1N60BTM-WS

SSR1N60BTM-WS

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Part No :

SSR1N60BTM-WS

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 600V 900MA DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12350 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 09 - Jun 13 2024
PDF
SSR1N60BTM-WS PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:900mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:12Ohm @ 450mA, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.7 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:215 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 28W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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