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FDA59N30

FDA59N30

MOSFET N-CH 300V 59A TO3PN

FDA59N30

FDA59N30

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Part No :

FDA59N30

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 300V 59A TO3PN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11950 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 22 - Sep 26 2024
PDF
FDA59N30 PDF
Type Description
Series:UniFET™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):300 V
Current - Continuous Drain (Id) @ 25°C:59A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:56mOhm @ 29.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:100 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4670 pF @ 25 V
FET Feature:-
Power Dissipation (Max):500W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3PN
Package / Case:TO-3P-3, SC-65-3
FDA59N30 is available at GangBo-ic.com, Please review product page below for detailed information, including FDA59N30 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDA59N30 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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