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IPB80N06S2L07ATMA3

IPB80N06S2L07ATMA3

MOSFET N-CH 55V 80A TO263-3

IPB80N06S2L07ATMA3

IPB80N06S2L07ATMA3

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Part No :

IPB80N06S2L07ATMA3

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 55V 80A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
081808 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 17 - Jun 21 2024
PDF
IPB80N06S2L07ATMA3 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:130 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3160 pF @ 25 V
FET Feature:-
Power Dissipation (Max):210W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB80N06S2L07ATMA3 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB80N06S2L07ATMA3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB80N06S2L07ATMA3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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