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RQ3E100MNTB1

RQ3E100MNTB1

Image is for reference, please contact us to get the real picture

Part No :

RQ3E100MNTB1

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 30V 10A HSMT8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15286 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 20 - May 24 2024
PDF
RQ3E100MNTB1 PDF
Type Description
Series:*
Package:Tape & Reel (TR)Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:12.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:9.9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:520 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HSMT (3.2x3)
Package / Case:8-PowerVDFN
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