MOSFET N-CH 60V 300MA TO236AB
Type | Description |
---|---|
Series: | TrenchMOS™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 300mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 5Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 40 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 830mW (Tc) |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-236AB |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SSR4N60BTFRochester Electronics |
N-CHANNEL POWER MOSFET |
|
RTQ020N05TRROHM Semiconductor |
MOSFET N-CH 45V 2A TSMT6 |
|
PSMN3R5-40YSDXNexperia |
MOSFET N-CH 40V 120A LFPAK56 |
|
IRFSL7434PBFRochester Electronics |
MOSFET N-CH 40V 195A TO262 |
|
IRF341Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPS65R1K4C6AKMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 3.2A TO251-3 |
|
FDS6675BZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 11A 8SOIC |
|
IPP60R600P6XKSA1Rochester Electronics |
MOSFET N-CH 600V 7.3A TO220-3 |
|
FCD850N80ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 6A DPAK |
|
SQ3457EV-T1_GE3Vishay / Siliconix |
MOSFET P-CHANNEL 30V 6.8A 6TSOP |
|
FQAF5N90Rochester Electronics |
MOSFET N-CH 900V 4.1A TO3PF |
|
STW15N80K5STMicroelectronics |
MOSFET N-CH 800V 14A TO247 |
|
FDD14AN06LA0-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 9.5A/50A TO252AA |