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FDP20N50F

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FDP20N50F

FDP20N50F

Image is for reference, please contact us to get the real picture

Part No :

FDP20N50F

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 500V 20A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10526 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 20 - May 24 2024
PDF
FDP20N50F PDF
Type Description
Series:UniFET™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:260mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:65 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3390 pF @ 25 V
FET Feature:-
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
FDP20N50F is available at GangBo-ic.com, Please review product page below for detailed information, including FDP20N50F price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDP20N50F to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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