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AOT3N100

AOT3N100

MOSFET N-CH 1000V 2.8A TO220

AOT3N100

AOT3N100

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Part No :

AOT3N100

Manufacturer
Alpha and Omega Semiconductor, Inc.
Description
MOSFET N-CH 1000V 2.8A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Availability
275627 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 16 - May 20 2024
PDF
AOT3N100 PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:830 pF @ 25 V
FET Feature:-
Power Dissipation (Max):132W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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