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TK39J60W,S1VQ

TK39J60W,S1VQ

Image is for reference, please contact us to get the real picture

Part No :

TK39J60W,S1VQ

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 600V 38.8A TO3P
Catalog
Transistors - FETs, MOSFETs - Single
Availability
409840 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 29 - Nov 02 2025
PDF
TK39J60W,S1VQ PDF
Type Description
Series:DTMOSIV
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:38.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:65mOhm @ 19.4A, 10V
Vgs(th) (Max) @ Id:3.7V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4100 pF @ 300 V
FET Feature:Super Junction
Power Dissipation (Max):270W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P(N)
Package / Case:TO-3P-3, SC-65-3
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