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BSS84XHZGG2CR

BSS84XHZGG2CR

MOSFET P-CH 60V 230MA DFN1010-3W

FTSH-109-04-F-DH-A

FTSH-109-04-F-DH-A

CONN HEADER SMD R/A 18POS 1.27MM

1855250-2

1855250-2

HDM W/FA SMPR080F130F K CUTS

AMFW-6S-10951280-80-N

AMFW-6S-10951280-80-N

AMPLIFIER - LOW NOISE SATCOM

BSS84XHZGG2CR

BSS84XHZGG2CR

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Part No :

BSS84XHZGG2CR

Manufacturer
ROHM Semiconductor
Description
MOSFET P-CH 60V 230MA DFN1010-3W
Catalog
Transistors - FETs, MOSFETs - Single
Availability
011201 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 14 - Jun 18 2025
Type Description
Series:Automotive, AEC-Q101
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:5.3Ohm @ 230mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:34 pF @ 30 V
FET Feature:-
Power Dissipation (Max):1W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN1010-3W
Package / Case:3-XFDFN
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