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BSC018NE2LSATMA1

BSC018NE2LSATMA1

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Part No :

BSC018NE2LSATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 25V 29A/100A TDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10972 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 31 - Jun 04 2025
PDF
BSC018NE2LSATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:29A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2800 pF @ 12 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 69W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-1
Package / Case:8-PowerTDFN
BSC018NE2LSATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSC018NE2LSATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSC018NE2LSATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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