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FQP7N20

FQP7N20

MOSFET N-CH 200V 6.6A TO220-3

OQ2371000000G

OQ2371000000G

TERM BLOCK HDR 23POS VERT 5MM

FQP7N20

FQP7N20

Image is for reference, please contact us to get the real picture

Part No :

FQP7N20

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 200V 6.6A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11468 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 02 - Jun 06 2024
PDF
FQP7N20 PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:690mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:400 pF @ 25 V
FET Feature:-
Power Dissipation (Max):63W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
FQP7N20 is available at GangBo-ic.com, Please review product page below for detailed information, including FQP7N20 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQP7N20 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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