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BSC028N06LS3GATMA1

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Part No :: BSC028N06LS3GATMA1

Manufacturer: IR (Infineon Technologies)

Description: MOSFET N-CH 60V 23A/100A TDSON

Catalog: Transistors - FETs, MOSFETs - Single

Availability: 10335 pieces

Shipped from: HK warehouse

Expected Shipping Date: May 17 - May 21 2024

PDF: BSC028N06LS3GATMA1 PDF

Type	Description
Series:	OptiMOS™
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	23A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	2.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:	2.2V @ 93µA
Gate Charge (Qg) (Max) @ Vgs:	175 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	13000 pF @ 30 V
FET Feature:	-
Power Dissipation (Max):	2.5W (Ta), 139W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TDSON-8-1
Package / Case:	8-PowerTDFN

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GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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