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IPB019N08N3GATMA1

IPB019N08N3GATMA1

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IPB019N08N3GATMA1

IPB019N08N3GATMA1

Image is for reference, please contact us to get the real picture

Part No :

IPB019N08N3GATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 80V 180A TO263-7
Catalog
Transistors - FETs, MOSFETs - Single
Availability
19881 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 07 - May 11 2025
PDF
IPB019N08N3GATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.5V @ 270µA
Gate Charge (Qg) (Max) @ Vgs:206 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:14200 pF @ 40 V
FET Feature:-
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
IPB019N08N3GATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB019N08N3GATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB019N08N3GATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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