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IPU60R1K4C6BKMA1

IPU60R1K4C6BKMA1

Image is for reference, please contact us to get the real picture

Part No :

IPU60R1K4C6BKMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 600V 3.2A TO251-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
40500 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jul 14 - Jul 18 2025
PDF
IPU60R1K4C6BKMA1 PDF
Type Description
Series:CoolMOS™ C6
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:1.4Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id:3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs:9.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 100 V
FET Feature:-
Power Dissipation (Max):28.4W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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