English
简体中文
MOSFET N-CH 150V 4.6A/16A 8MLP
Image is for reference, please contact us to get the real picture
| Type | Description |
|---|---|
| Series: | PowerTrench® |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 150 V |
| Current - Continuous Drain (Id) @ 25°C: | 4.6A (Ta), 16A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Rds On (Max) @ Id, Vgs: | 51mOhm @ 4.6A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 15 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 905 pF @ 75 V |
| FET Feature: | - |
| Power Dissipation (Max): | 2.3W (Ta), 40W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 8-MLP (3.3x3.3) |
| Package / Case: | 8-PowerWDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
SCTW35N65G2VAGSTMicroelectronics |
SICFET N-CH 650V 45A HIP247 |
|
SI7461DP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 60V 8.6A PPAK SO-8 |
|
SIR880ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 80V 60A PPAK SO-8 |
|
PMN25UN,115Rochester Electronics |
MOSFET N-CH 20V 6A 6TSOP |
|
STD7N65M6STMicroelectronics |
MOSFET N-CH 650V 5A DPAK |
|
SIHF540S-GE3Vishay / Siliconix |
MOSFET N-CH 100V 28A D2PAK |
|
TK6A55DA(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 550V 5.5A TO220SIS |
|
BSH203,215Nexperia |
MOSFET P-CH 30V 470MA TO236AB |
|
APT50M75LFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 57A TO264 |
|
SIRA90DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 30V 100A PPAK SO-8 |
|
R6030KNXROHM Semiconductor |
MOSFET N-CH 600V 30A TO220FM |
|
SPD02N50C3Rochester Electronics |
MOSFET N-CH 560V 1.8A TO252-3 |
|
BSC0804LSATMA1IR (Infineon Technologies) |
100V, N-CH MOSFET, LOGIC LEVEL, |