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R6011KNJTL

R6011KNJTL

MOSFET N-CH 600V 11A LPTS

VJ1210HW

VJ1210HW

BOX FIBERGLASS/POLYESTER 12X10X5

R6011KNJTL

R6011KNJTL

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Part No :

R6011KNJTL

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 600V 11A LPTS
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10427 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 03 - Jun 07 2024
PDF
R6011KNJTL PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:390mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id:5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:740 pF @ 25 V
FET Feature:-
Power Dissipation (Max):124W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LPTS
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
R6011KNJTL is available at GangBo-ic.com, Please review product page below for detailed information, including R6011KNJTL price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for R6011KNJTL to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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