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FQB30N06LTM

FQB30N06LTM

MOSFET N-CH 60V 32A D2PAK

FQB30N06LTM

FQB30N06LTM

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Part No :

FQB30N06LTM

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 60V 32A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13250 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 11 - Jun 15 2024
PDF
FQB30N06LTM PDF
Type Description
Series:QFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:32A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:35mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1040 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.75W (Ta), 79W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQB30N06LTM is available at GangBo-ic.com, Please review product page below for detailed information, including FQB30N06LTM price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQB30N06LTM to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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