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IPB031NE7N3GATMA1

IPB031NE7N3GATMA1

MOSFET N-CH 75V 100A TO263-3-2

XC6123E648ER-G

XC6123E648ER-G

IC SUPERVISOR 1 CHANNEL 6USPC

IPB031NE7N3GATMA1

IPB031NE7N3GATMA1

Image is for reference, please contact us to get the real picture

Part No :

IPB031NE7N3GATMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 75V 100A TO263-3-2
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13741 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 03 - Jun 07 2024
PDF
IPB031NE7N3GATMA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.8V @ 155µA
Gate Charge (Qg) (Max) @ Vgs:117 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8.13 pF @ 37.5 V
FET Feature:-
Power Dissipation (Max):214W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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