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NTD4906N-1G

NTD4906N-1G

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NTD4906N-1G

NTD4906N-1G

Image is for reference, please contact us to get the real picture

Part No :

NTD4906N-1G

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 30V 10.3A/54A IPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
17450 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 26 - Oct 30 2025
PDF
NTD4906N-1G PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:10.3A (Ta), 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.932 pF @ 15 V
FET Feature:-
Power Dissipation (Max):1.38W (Ta), 37.5W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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