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RS1E320GNTB

RS1E320GNTB

MOSFET N-CH 30V 32A 8HSOP

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RS1E320GNTB

RS1E320GNTB

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Part No :

RS1E320GNTB

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 30V 32A 8HSOP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12350 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jul 22 - Jul 26 2025
PDF
RS1E320GNTB PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:32A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.9mOhm @ 32A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:42.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2850 pF @ 15 V
FET Feature:-
Power Dissipation (Max):3W (Ta), 34.6W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HSOP
Package / Case:8-PowerTDFN
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