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BSP170PE6327T

BSP170PE6327T

MOSFET P-CH 60V 1.9A SOT223-4

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BSP170PE6327T

BSP170PE6327T

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Part No :

BSP170PE6327T

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 60V 1.9A SOT223-4
Catalog
Transistors - FETs, MOSFETs - Single
Availability
449544 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 07 - May 11 2025
PDF
BSP170PE6327T PDF
Type Description
Series:SIPMOS®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Discontinued at Digi-Key
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:300mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:410 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223-4
Package / Case:TO-261-4, TO-261AA
BSP170PE6327T is available at GangBo-ic.com, Please review product page below for detailed information, including BSP170PE6327T price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSP170PE6327T to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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