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STI21NM60ND

STI21NM60ND

Image is for reference, please contact us to get the real picture

Part No :

STI21NM60ND

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 600V 17A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
490049 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jul 19 - Jul 23 2025
PDF
STI21NM60ND PDF
Type Description
Series:FDmesh™ II
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:220mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1800 pF @ 50 V
FET Feature:-
Power Dissipation (Max):140W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
STI21NM60ND is available at GangBo-ic.com, Please review product page below for detailed information, including STI21NM60ND price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for STI21NM60ND to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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