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NVB6412ANT4G

NVB6412ANT4G

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Part No :

NVB6412ANT4G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 100V 58A D2PAK-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
812481 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 04 - May 08 2025
PDF
NVB6412ANT4G PDF
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:58A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:18.2mOhm @ 58A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:100 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3500 pF @ 25 V
FET Feature:-
Power Dissipation (Max):167W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK-3
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NVB6412ANT4G is available at GangBo-ic.com, Please review product page below for detailed information, including NVB6412ANT4G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NVB6412ANT4G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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