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IRF610L

IRF610L

MOSFET N-CH 200V 3.3A TO262

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IRF610L

IRF610L

Image is for reference, please contact us to get the real picture

Part No :

IRF610L

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 200V 3.3A TO262
Catalog
Transistors - FETs, MOSFETs - Single
Availability
652665 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jul 14 - Jul 18 2025
PDF
IRF610L PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:140 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3W (Ta), 36W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
IRF610L is available at GangBo-ic.com, Please review product page below for detailed information, including IRF610L price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF610L to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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