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SI7102DN-T1-E3

SI7102DN-T1-E3

MOSFET N-CH 12V 35A PPAK 1212-8

SI7102DN-T1-E3

SI7102DN-T1-E3

Image is for reference, please contact us to get the real picture

Part No :

SI7102DN-T1-E3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 12V 35A PPAK 1212-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
063206 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 05 - May 09 2025
PDF
SI7102DN-T1-E3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:3.8mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 8 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:3720 pF @ 6 V
FET Feature:-
Power Dissipation (Max):3.8W (Ta), 52W (Tc)
Operating Temperature:-50°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8
Package / Case:PowerPAK® 1212-8
SI7102DN-T1-E3 is available at GangBo-ic.com, Please review product page below for detailed information, including SI7102DN-T1-E3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SI7102DN-T1-E3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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