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IPB021N06N3GATMA1

IPB021N06N3GATMA1

Image is for reference, please contact us to get the real picture

Part No :

IPB021N06N3GATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 60V 120A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
653765 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 28 - Nov 01 2025
PDF
IPB021N06N3GATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 196µA
Gate Charge (Qg) (Max) @ Vgs:275 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:23000 pF @ 30 V
FET Feature:-
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB021N06N3GATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB021N06N3GATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB021N06N3GATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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