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IPP057N08N3GHKSA1

IPP057N08N3GHKSA1

Image is for reference, please contact us to get the real picture

Part No :

IPP057N08N3GHKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 80V 80A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
654065 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 14 - Jun 18 2025
PDF
IPP057N08N3GHKSA1 PDF
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:5.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs:69 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4750 pF @ 40 V
FET Feature:-
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
IPP057N08N3GHKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPP057N08N3GHKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPP057N08N3GHKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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