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SPB35N10 G

SPB35N10 G

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Part No :

SPB35N10 G

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 35A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
084108 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 13 - Oct 17 2025
PDF
SPB35N10 G PDF
Type Description
Series:SIPMOS®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:44mOhm @ 26.4A, 10V
Vgs(th) (Max) @ Id:4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs:65 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1570 pF @ 25 V
FET Feature:-
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SPB35N10 G is available at GangBo-ic.com, Please review product page below for detailed information, including SPB35N10 G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SPB35N10 G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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