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FQB13N06TM

FQB13N06TM

Image is for reference, please contact us to get the real picture

Part No :

FQB13N06TM

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 60V 13A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
014301 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 25 - Oct 29 2025
PDF
FQB13N06TM PDF
Type Description
Series:QFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:135mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:310 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.75W (Ta), 45W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQB13N06TM is available at GangBo-ic.com, Please review product page below for detailed information, including FQB13N06TM price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQB13N06TM to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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