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IPD160N04LGBTMA1

IPD160N04LGBTMA1

MOSFET N-CH 40V 30A TO252-3

IPD160N04LGBTMA1

IPD160N04LGBTMA1

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Part No :

IPD160N04LGBTMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 40V 30A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
936193 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jul 17 - Jul 21 2025
PDF
IPD160N04LGBTMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:16mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 20 V
FET Feature:-
Power Dissipation (Max):31W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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