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SPI11N60C3XKSA1

SPI11N60C3XKSA1

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Part No :

SPI11N60C3XKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 11A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
586358 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jul 25 - Jul 29 2025
PDF
SPI11N60C3XKSA1 PDF
Type Description
Series:CoolMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:380mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 25 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3-1
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
SPI11N60C3XKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including SPI11N60C3XKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SPI11N60C3XKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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