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SPD30N03S2L10T

SPD30N03S2L10T

Image is for reference, please contact us to get the real picture

Part No :

SPD30N03S2L10T

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 30V 30A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
256425 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jul 29 - Aug 02 2025
PDF
SPD30N03S2L10T PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:41.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1550 pF @ 25 V
FET Feature:-
Power Dissipation (Max):100W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
SPD30N03S2L10T is available at GangBo-ic.com, Please review product page below for detailed information, including SPD30N03S2L10T price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SPD30N03S2L10T to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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