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IRF6608TR1

IRF6608TR1

Image is for reference, please contact us to get the real picture

Part No :

IRF6608TR1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 30V 13A DIRECTFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
206920 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 11 - Jun 15 2025
PDF
IRF6608TR1 PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:13A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:2120 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.1W (Ta), 42W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ ST
Package / Case:DirectFET™ Isometric ST
IRF6608TR1 is available at GangBo-ic.com, Please review product page below for detailed information, including IRF6608TR1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF6608TR1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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