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IRFSL4229PBF

IRFSL4229PBF

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IRFSL4229PBF

IRFSL4229PBF

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Part No :

IRFSL4229PBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 250V 45A TO262
Catalog
Transistors - FETs, MOSFETs - Single
Availability
227822 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 11 - Jun 15 2025
PDF
IRFSL4229PBF PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:48mOhm @ 26A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4560 pF @ 25 V
FET Feature:-
Power Dissipation (Max):330W (Tc)
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
IRFSL4229PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFSL4229PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFSL4229PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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