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IPB065N15N3GE8187ATMA1

IPB065N15N3GE8187ATMA1

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Part No :

IPB065N15N3GE8187ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 150V 130A TO263-7
Catalog
Transistors - FETs, MOSFETs - Single
Availability
098109 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 10 - Nov 14 2025
PDF
IPB065N15N3GE8187ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:130A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V, 10V
Rds On (Max) @ Id, Vgs:6.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs:93 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7300 pF @ 75 V
FET Feature:-
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7
Package / Case:TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
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