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RV4E031RPHZGTCR1

RV4E031RPHZGTCR1

MOSFET P-CH 30V 3.1A DFN1616-6W

RV4E031RPHZGTCR1

RV4E031RPHZGTCR1

Image is for reference, please contact us to get the real picture

Part No :

RV4E031RPHZGTCR1

Manufacturer
ROHM Semiconductor
Description
MOSFET P-CH 30V 3.1A DFN1616-6W
Catalog
Transistors - FETs, MOSFETs - Single
Availability
754975 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 03 - Jun 07 2024
Type Description
Series:Automotive, AEC-Q101
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:105mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:4.8 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:460 pF @ 10 V
FET Feature:-
Power Dissipation (Max):1.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN1616-6W
Package / Case:6-PowerWFDFN
RV4E031RPHZGTCR1 is available at GangBo-ic.com, Please review product page below for detailed information, including RV4E031RPHZGTCR1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RV4E031RPHZGTCR1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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  • RV4E031RPHZGTCR1 Price
  • RV4E031RPHZGTCR1 Series
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