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RV4E031RPHZGTCR1

RV4E031RPHZGTCR1

MOSFET P-CH 30V 3.1A DFN1616-6W

RV4E031RPHZGTCR1

RV4E031RPHZGTCR1

Image is for reference, please contact us to get the real picture

Part No :

RV4E031RPHZGTCR1

Manufacturer
ROHM Semiconductor
Description
MOSFET P-CH 30V 3.1A DFN1616-6W
Catalog
Transistors - FETs, MOSFETs - Single
Availability
754975 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 29 - Nov 02 2025
Type Description
Series:Automotive, AEC-Q101
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:105mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:4.8 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:460 pF @ 10 V
FET Feature:-
Power Dissipation (Max):1.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN1616-6W
Package / Case:6-PowerWFDFN
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  • RV4E031RPHZGTCR1 Price
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