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SIHD11N80AE-GE3

SIHD11N80AE-GE3

MOSFET N-CH 800V 8A TO252AA

SIHD11N80AE-GE3

SIHD11N80AE-GE3

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Part No :

SIHD11N80AE-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 800V 8A TO252AA
Catalog
Transistors - FETs, MOSFETs - Single
Availability
165116 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 01 - Nov 05 2025
Type Description
Series:E
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:450mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:804 pF @ 100 V
FET Feature:-
Power Dissipation (Max):78W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
SIHD11N80AE-GE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SIHD11N80AE-GE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SIHD11N80AE-GE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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