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TPH3206LSGB

TPH3206LSGB

GANFET N-CH 650V 16A 3PQFN

TPH3206LSGB

TPH3206LSGB

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Part No :

TPH3206LSGB

Manufacturer
Transphorm
Description
GANFET N-CH 650V 16A 3PQFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
348334 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 25 - Oct 29 2025
Type Description
Series:-
Package:Tray
Part Status:Obsolete
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V
Rds On (Max) @ Id, Vgs:180mOhm @ 10A, 8V
Vgs(th) (Max) @ Id:2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:6.2 nC @ 4.5 V
Vgs (Max):±18V
Input Capacitance (Ciss) (Max) @ Vds:720 pF @ 480 V
FET Feature:-
Power Dissipation (Max):81W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-PQFN (8x8)
Package / Case:3-PowerDFN
TPH3206LSGB is available at GangBo-ic.com, Please review product page below for detailed information, including TPH3206LSGB price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for TPH3206LSGB to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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