







MEMS OSC XO 148.351648MHZ LVDS
SWITCH SNAP ACTION DPST 3A 240V
IC NVSRAM 1MBIT PARALLEL 48FBGA
MOSFET N-CH 200V 27.4A TO254AA
| Type | Description |
|---|---|
| Series: | - |
| Package: | Bulk |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 200 V |
| Current - Continuous Drain (Id) @ 25°C: | 27.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 100mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 115 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | - |
| FET Feature: | - |
| Power Dissipation (Max): | 4W (Ta), 150W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-254AA |
| Package / Case: | TO-254-3, TO-254AA (Straight Leads) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
|
FQD5N50CTM-WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CHANNEL 500V 4A TO252 |
|
|
UPD703069YGJ-169-UEN-ARenesas Electronics America |
MOSFET N-CH |
|
|
IPC60R950C6UNSAWNX6SA1IR (Infineon Technologies) |
MOSFET N-CH BARE DIE |
|
|
RQA0011DNS#G0Renesas Electronics America |
MOSFET N-CH 16V 3.8A 2HWSON |
|
|
JAN2N6788UMicrosemi |
MOSFET N-CH 100V 4.5A 18ULCC |
|
|
SIR774DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V |
|
|
STI18N60M2STMicroelectronics |
MOSFET N-CH 600V 9A I2PAK |
|
|
AO7401LAlpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 1.2A SC70-3 |
|
|
AONS36354Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V DFN 5X6 |
|
|
AO3404A_104Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V SOT23 |
|
|
64-2120PBFIR (Infineon Technologies) |
MOSFET N-CH 55V 75A D2PAK |
|
|
2N7640-GAGeneSiC Semiconductor |
TRANS SJT 650V 16A TO276 |
|
|
UPA2394T1P-E1-ARenesas Electronics America |
TRANSISTOR |