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NGTB50N65FL2WG

NGTB50N65FL2WG

INSULATED GATE BIPOLAR TRANSISTO

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NGTB50N65FL2WG

NGTB50N65FL2WG

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Part No :

NGTB50N65FL2WG

Manufacturer
Rochester Electronics
Description
INSULATED GATE BIPOLAR TRANSISTO
Catalog
Transistors - IGBTs - Single
Availability
11206 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jul 08 - Jul 12 2025
PDF
NGTB50N65FL2WG PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):100 A
Current - Collector Pulsed (Icm):200 A
Vce(on) (Max) @ Vge, Ic:2V @ 15V, 50A
Power - Max:417 W
Switching Energy:1.5mJ (on), 460µJ (off)
Input Type:Standard
Gate Charge:220 nC
Td (on/off) @ 25°C:100ns/237ns
Test Condition:400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr):94 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
NGTB50N65FL2WG is available at GangBo-ic.com, Please review product page below for detailed information, including NGTB50N65FL2WG price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NGTB50N65FL2WG to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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