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D2TO035C24000JTE3

D2TO035C24000JTE3

RES SMD 2.4K OHM 5% 35W TO263

70V657S10DRG

70V657S10DRG

IC SRAM 1.125MBIT PAR 208PQFP

70V657S10DRG

70V657S10DRG

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Part No :

70V657S10DRG

Manufacturer
Renesas Electronics America
Description
IC SRAM 1.125MBIT PAR 208PQFP
Catalog
Memory
Availability
667266 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 02 - Jun 06 2024
PDF
70V657S10DRG PDF
Type Description
Series:-
Package:Tray
Part Status:Active
Memory Type:Volatile
Memory Format:SRAM
Technology:SRAM - Dual Port, Asynchronous
Memory Size:1.125Mb (32K x 36)
Memory Interface:Parallel
Clock Frequency:-
Write Cycle Time - Word, Page:10ns
Access Time:10 ns
Voltage - Supply:3.15V ~ 3.45V
Operating Temperature:0°C ~ 70°C (TA)
Mounting Type:Surface Mount
Package / Case:208-BFQFP
Supplier Device Package:208-PQFP (28x28)
70V657S10DRG is available at GangBo-ic.com, Please review product page below for detailed information, including 70V657S10DRG price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for 70V657S10DRG to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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Phone: 00852-52612101

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